Punch-Through in Resurf Devices
نویسندگان
چکیده
A two-dimensional analysis of punch-through effects in high voltage lateral DMOS transistors is presented. The behaviour of these devices has been investigated for various doping concentrations. For one doping profile punch-through occurs between 6V and 60V drain voltage depending on the gate voltage, for the other doping profile no parasitic channel is built up even at lOOV drain voltage. Furthermore, it is shown that the parasitic channel does not influence the switching behaviour in a critical way. These two-dimensional effects cannot be explained by approximations from one-dimensional models.
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